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Guangzhou United Star Technology Co., Ltd.

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  • Time of issue:2021-06-08 17:55
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(Summary description)Booth: P81 | English name: Linksatcom Technology Co. Ltd.

Provide solutions for various packaging and power ratios, and provide application guidance and rapid customization services. We will vigorously develop 4G, 5G wireless communication base stations, satellite communication ground stations, Internet of Things base stations, and various radars and other fields. Become my country's leading private provider of GaN RF power chips.

Guangzhou United Star Technology Co., Ltd.

(Summary description)Booth: P81 | English name: Linksatcom Technology Co. Ltd.

Provide solutions for various packaging and power ratios, and provide application guidance and rapid customization services. We will vigorously develop 4G, 5G wireless communication base stations, satellite communication ground stations, Internet of Things base stations, and various radars and other fields. Become my country's leading private provider of GaN RF power chips.

  • Categories:Exhibitor List
  • Author:
  • Origin:
  • Time of issue:2021-06-08 17:55
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Information

Address: Room 308, Building B10, No. 11, Kaiyuan Avenue, Science City, Guangzhou High-tech Industrial Development Zone

Post Code: 510530

Contact: Xu Yongshen

Mobile phone: 18588717452

Telephone: 020-82517761

E-mail: yongshen.xu@linksatcom.com

company profiles:

Guangzhou Lianxing Technology Co., Ltd. was established on August 18, 2016 with a registered capital of 5 million yuan. It is located at 308, Building B10, No. 11, Kaiyuan Avenue, Science City, Guangzhou High-tech Industrial Development Zone. It is a key incubator of Tsinghua Pearl River Delta Research Institute . Based on the third-generation semiconductor gallium nitride and Fabless as the model, the company is committed to the design, outsourcing, matching design, micro-assembly and packaging of RF power amplifier chips, as well as its use in wireless communications, satellite communications, and various Application development in areas such as radar and electronic jamming. Since the establishment of the company, the products that have been successfully developed include broadband universal gallium nitride microwave power amplifier chips, radio frequency power amplifier chips for 4G and 5G wireless communication base stations, and gallium nitride power amplifier devices for L-band, S-band and C-band. The output power can reach up to 300W. Among similar products in the world, they are at the world-class level in terms of withstand voltage characteristics, consistency, heat dissipation, efficiency, linearity and operating temperature, and reliability.

The founder of the company, Mr. Sun Yi, has more than 15 years of R&D and industrialization experience in the field of microwave communications in North America. As early as 2005, when the third-generation semiconductor appeared on the market, he began to study its application in depth. Early silicon carbide power amplifiers to Ka-band broadband chips, from C-band gallium nitride power amplifiers to Ku-band and Ka-band power amplifiers, were directly supplied to the world’s leading microwave communications companies, with an output value of tens of millions of dollars. , Has the advantage of combining deep research and development capabilities with industrialization experience. With a deep understanding of ISO9001, SAE, AS9100-C quality control system and Six Sigma green belt certificate, the company has actually transformed its core technology into industrialized products with reliable quality.

Through the efforts of team members, the company has successively won the first place in the electronic information industry start-up group of the Guangzhou Division of China Innovation and Entrepreneurship Competition, Guangdong Province’s overseas high-level overseas talents, the fourth batch of Guangdong Province’s core members of the "Pearl River Talent Program" innovation and entrepreneurship team, Guangzhou The city's high-end foreign experts, the first batch of entrepreneurial talents in Guangzhou Development Zone, and other honors. In the future, the company will continue to use the third-generation semiconductor gallium nitride as the core, based on the mature microwave power chip device and module research and development capabilities, to provide customers with a variety of packaging and power ratio solutions under specific frequency bands, while providing Application guidance and rapid customized services, vigorously develop 4G, 5G wireless communication base stations, satellite communication ground stations, Internet of Things base stations, and various radars and other fields, determined to become my country's leading private provider of gallium nitride radio frequency power chips.

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